NEW MODEL FOR BORON-DIFFUSION IN SILICON

被引：15

作者：

ANDERSON, JR ^{[1
]}

GIBBONS, JF ^{[1
]}

机构：

[1] STANFORD ELECTR LABS,STANFORD,CA 94305

来源：

APPLIED PHYSICS LETTERS | 1976年 / 28卷 / 04期

关键词：

D O I：

10.1063/1.88717

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：184 / 186

页数：3

相关论文

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[J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (10) : 3750 - &
[7] BORON DIFFUSION INTO SILICON USING ELEMENTAL BORON
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[8] VANVECHTEN JA, TO BE PUBLISHED
[9] VANVECHTEN JA, 1974, INT LATTICE DEFECTS
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