GALLIUM DIFFUSIONS INTO SILICON AND BORON-DOPED SILICON

[1] BOLTAKS BI, 1964, SOV PHYS-SOL STATE, V5, P2649

[2] FARIFIELD JM, 1967, J APPL PHYS, V38, P3148

[3] Fistul' V.I., 1969, HEAVILY DOPED SEMICO, VVolume 1

[4] DIFFUSION OF DONOR AND ACCEPTOR ELEMENTS IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1956, 27 (05) : 544 - 553

[5] Furman N. H., 1962, STANDARD METHODS CHE, V1

[6] INTERACTIONS IN SEQUENTIAL DIFFUSION PROCESSES IN SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (09) : 4272 - +

[7] HU SW, TO BE PUBLISHED

[8] DIFFUSANT IMPURITY-CONCENTRATION PROFILES IN THIN LAYERS ON SILICON [J]. SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) : 331 - &

[9] Kendall D. L., 1969, Semiconductor silicon, P358

[10] KREN JG, 1969, APPL PHYS LETTERS, V5, P49

[1] BOLTAKS BI, 1964, SOV PHYS-SOL STATE, V5, P2649

[2] FARIFIELD JM, 1967, J APPL PHYS, V38, P3148

[3] Fistul' V.I., 1969, HEAVILY DOPED SEMICO, VVolume 1

[4] DIFFUSION OF DONOR AND ACCEPTOR ELEMENTS IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1956, 27 (05) : 544 - 553

[5] Furman N. H., 1962, STANDARD METHODS CHE, V1

[6] INTERACTIONS IN SEQUENTIAL DIFFUSION PROCESSES IN SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (09) : 4272 - +

[7] HU SW, TO BE PUBLISHED

[8] DIFFUSANT IMPURITY-CONCENTRATION PROFILES IN THIN LAYERS ON SILICON [J]. SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) : 331 - &

[9] Kendall D. L., 1969, Semiconductor silicon, P358

[10] KREN JG, 1969, APPL PHYS LETTERS, V5, P49