DIFFUSION OF CHARGED PARTICLES INTO A SEMICONDUCTOR UNDER CONSIDERATION OF THE BUILT-IN FIELD

被引：52

作者：

LEHOVEC, K

SLOBODSKOY, A

机构：

来源：

SOLID-STATE ELECTRONICS | 1961年 / 3卷 / 01期

关键词：

D O I：

10.1016/0038-1101(61)90079-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：45 / 50

页数：6

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[1] THE DIFFUSION OF IONIZED IMPURITIES IN SEMICONDUCTORS
ALLEN, JW
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 15 (1-2) : 134 - &
[2] DIFFUSION OF BORON INTO SILICON
KURTZ, AD
YEE, R
[J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (02) : 303 - 305
[3] FORMATION OF JUNCTION STRUCTURES BY SOLID-STATE DIFFUSION
SMITS, FM
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1958, 46 (06): : 1049 - 1061
[4] AN ANALYSIS OF DIFFUSION IN SEMICONDUCTORS
ZAROMB, S
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1957, 1 (01) : 57 - 61