DOPANT DIFFUSION IN SILICON - A CONSISTENT VIEW INVOLVING NONEQUILIBRIUM DEFECTS

被引：199

作者：

MATHIOT, D

PFISTER, JC

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 55卷 / 10期

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D O I：

10.1063/1.332941

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：3518 / 3530

页数：13

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