DIFFUSION OF SUBSTITUTIONAL IMPURITIES IN SILICON AT SHORT OXIDATION TIMES - AN INSIGHT INTO POINT-DEFECT KINETICS

被引：181

作者：

ANTONIADIS, DA

MOSKOWITZ, I

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 10期

关键词：

D O I：

10.1063/1.330067

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：6788 / 6796

页数：9

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