OXIDATION-INDUCED POINT-DEFECTS IN SILICON

[1] EFFECT OF OXIDATION ON ORIENTATION-DEPENDENT BORON DIFFUSION IN SILICON [J]. SOLID-STATE ELECTRONICS, 1973, 16 (06) : 709 - 717

[2] OXIDATION-ENHANCED DIFFUSION OF ARSENIC AND PHOSPHORUS IN NEAR-INTRINSIC [100] SILICON [J]. APPLIED PHYSICS LETTERS, 1978, 33 (12) : 1030 - 1033

[3] ANTONIADIS DA, 1978, J ELECTROCHEM SOC, V125, P814

[4] QUANTITATIVE MODEL FOR DIFFUSION OF PHOSPHORUS IN SILICON AND EMITTER DIP EFFECT [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (07) : 1107 - 1118

[5] EFFECT OF OXIDATION ON THE DIFFUSION OF PHOSPHORUS IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (01) : 280 - 284

[6] GOESDELE U, 1979, APPL PHYS, V20, P265

[7] GOESELE U, 1980, NOV MAT RES SOC M BO

[8] HILL C, 1981, ELECTROCHEMICAL SOC, P988

[9] Hofker W. K., 1973, Applied Physics, V2, P265, DOI 10.1007/BF00889509

[10] ANOMALOUS TEMPERATURE EFFECT OF OXIDATION STACKING-FAULTS IN SILICON [J]. APPLIED PHYSICS LETTERS, 1975, 27 (04) : 165 - 167

[1] EFFECT OF OXIDATION ON ORIENTATION-DEPENDENT BORON DIFFUSION IN SILICON [J]. SOLID-STATE ELECTRONICS, 1973, 16 (06) : 709 - 717

[2] OXIDATION-ENHANCED DIFFUSION OF ARSENIC AND PHOSPHORUS IN NEAR-INTRINSIC [100] SILICON [J]. APPLIED PHYSICS LETTERS, 1978, 33 (12) : 1030 - 1033

[3] ANTONIADIS DA, 1978, J ELECTROCHEM SOC, V125, P814

[4] QUANTITATIVE MODEL FOR DIFFUSION OF PHOSPHORUS IN SILICON AND EMITTER DIP EFFECT [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (07) : 1107 - 1118

[5] EFFECT OF OXIDATION ON THE DIFFUSION OF PHOSPHORUS IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (01) : 280 - 284

[6] GOESDELE U, 1979, APPL PHYS, V20, P265

[7] GOESELE U, 1980, NOV MAT RES SOC M BO

[8] HILL C, 1981, ELECTROCHEMICAL SOC, P988

[9] Hofker W. K., 1973, Applied Physics, V2, P265, DOI 10.1007/BF00889509

[10] ANOMALOUS TEMPERATURE EFFECT OF OXIDATION STACKING-FAULTS IN SILICON [J]. APPLIED PHYSICS LETTERS, 1975, 27 (04) : 165 - 167