OXIDATION-INDUCED POINT-DEFECTS IN SILICON

[11] FORMATION OF STACKING-FAULTS AND ENHANCED DIFFUSION IN OXIDATION OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (04) : 1567 - 1573

[12] DEFECTS IN SILICON SUBSTRATES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (01): : 17 - 31

[13] HU SM, 1980, NOV MAT RES SOC M BO

[14] HU SM, 1973, DIFFUSION SEMICONDUC

[15] CORE STRUCTURE OF EXTRINSIC STACKING-FAULTS IN SILICON [J]. APPLIED PHYSICS LETTERS, 1978, 32 (08) : 451 - 453

[16] KINETICS OF GROWTH OF THE OXIDATION STACKING-FAULTS [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (12) : 7996 - 8005

[17] THE GROWTH OF OXIDATION STACKING-FAULTS AND THE POINT-DEFECT GENERATION AT SI-SIO INTERFACE DURING THERMAL-OXIDATION OF SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (05) : 1121 - 1130

[18] THE OXIDATION RATE DEPENDENCE OF OXIDATION-ENHANCED DIFFUSION OF BORON AND PHOSPHORUS IN SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (05) : 1131 - 1137

[19] LIN AM, 1979, EL SOC EXT ABSTR, P1349

[20] PHOSPHORUS DIFFUSION IN SILICON UNDER OXIDIZING ATMOSPHERES [J]. SOLID-STATE ELECTRONICS, 1973, 16 (12) : 1419 - 1421

[11] FORMATION OF STACKING-FAULTS AND ENHANCED DIFFUSION IN OXIDATION OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (04) : 1567 - 1573

[12] DEFECTS IN SILICON SUBSTRATES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (01): : 17 - 31

[13] HU SM, 1980, NOV MAT RES SOC M BO

[14] HU SM, 1973, DIFFUSION SEMICONDUC

[15] CORE STRUCTURE OF EXTRINSIC STACKING-FAULTS IN SILICON [J]. APPLIED PHYSICS LETTERS, 1978, 32 (08) : 451 - 453

[16] KINETICS OF GROWTH OF THE OXIDATION STACKING-FAULTS [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (12) : 7996 - 8005

[17] THE GROWTH OF OXIDATION STACKING-FAULTS AND THE POINT-DEFECT GENERATION AT SI-SIO INTERFACE DURING THERMAL-OXIDATION OF SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (05) : 1121 - 1130

[18] THE OXIDATION RATE DEPENDENCE OF OXIDATION-ENHANCED DIFFUSION OF BORON AND PHOSPHORUS IN SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (05) : 1131 - 1137

[19] LIN AM, 1979, EL SOC EXT ABSTR, P1349

[20] PHOSPHORUS DIFFUSION IN SILICON UNDER OXIDIZING ATMOSPHERES [J]. SOLID-STATE ELECTRONICS, 1973, 16 (12) : 1419 - 1421