DEFECTS IN SILICON SUBSTRATES

被引：160

作者：

HU, SM ^{[1
]}

机构：

[1] IBM CORP, DIV SYST PROD, HOPEWELL JUNCTION, NY 12533 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1977年 / 14卷 / 01期

关键词：

D O I：

10.1116/1.569117

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：17 / 31

页数：15

共 173 条

[1] ETCH PITS OBSERVED IN DISLOCATION-FREE SILICON CRYSTALS
ABE, T
SAMIZO, T
MARUYAMA, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1966, 5 (05) : 458 - &
[2] ABE T, 1973, SEMICONDUCTOR SILICO, P95
[3] AKKERMAN AF, 1975, SOV PHYS SEMICOND+, V9, P1212
[4] EFFECT OF OXIDATION ON ORIENTATION-DEPENDENT BORON DIFFUSION IN SILICON
ALLEN, WG
[J]. SOLID-STATE ELECTRONICS, 1973, 16 (06) : 709 - 717
[5] ORIENTATION DEPENDENCE OF DIFFUSION OF BORON IN SILICON
ALLEN, WG
ANAND, KV
[J]. SOLID-STATE ELECTRONICS, 1971, 14 (05) : 397 - &
[6] EFFECT OF CARBON ON LATTICE PARAMETER OF SILICON
BAKER, JA
TUCKER, TN
MOYER, NE
BUSCHERT, RC
[J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (09) : 4365 - &
[7] DIFFUSION PIPES IN SILICON NPN STRUCTURES
BARSON, F
HESS, MS
ROY, MM
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (02) : 304 - &
[8] BATAVIN VV, 1970, SOV PHYS CRYSTALLOGR, V15, P100
[9] BATAVIN VV, 1967, FIZ TVERD TELA+, V8, P2005
[10] BATAVIN VV, 1970, SOV PHYS SEMICOND+, V4, P641