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THERMAL-OXIDATION KINETICS OF SILICON IN PYROGENIC H2O AND 5-PERCENT HCL-H2O MIXTURES
被引:92
作者
:
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
DEAL, BE
机构
:
来源
:
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
|
1978年
/ 125卷
/ 04期
关键词
:
D O I
:
10.1149/1.2131502
中图分类号
:
O646 [电化学、电解、磁化学];
学科分类号
:
081704 ;
摘要
:
引用
收藏
页码:576 / 579
页数:4
相关论文
共 18 条
[1]
STABILIZATION OF SILICON SURFACES BY THERMALLY GROWN OXIDES
ATALLA, MM
论文数:
0
引用数:
0
h-index:
0
ATALLA, MM
TANNENBAUM, E
论文数:
0
引用数:
0
h-index:
0
TANNENBAUM, E
SCHEIBNER, EJ
论文数:
0
引用数:
0
h-index:
0
SCHEIBNER, EJ
[J].
BELL SYSTEM TECHNICAL JOURNAL,
1959,
38
(03):
: 749
-
783
[2]
Burgess R.R., 1973, SEMICONDUCTOR SILICO, P363
[3]
GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
DEAL, BE
GROVE, AS
论文数:
0
引用数:
0
h-index:
0
GROVE, AS
[J].
JOURNAL OF APPLIED PHYSICS,
1965,
36
(12)
: 3770
-
&
[4]
KINETICS OF THERMAL-OXIDATION OF SILICON IN O2/H2O AND O2/CL2 MIXTURES
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,INTEGRATED CIRCUITS LAB,STANFORD,CA 94305
STANFORD UNIV,INTEGRATED CIRCUITS LAB,STANFORD,CA 94305
DEAL, BE
HESS, DW
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,INTEGRATED CIRCUITS LAB,STANFORD,CA 94305
STANFORD UNIV,INTEGRATED CIRCUITS LAB,STANFORD,CA 94305
HESS, DW
PLUMMER, JD
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,INTEGRATED CIRCUITS LAB,STANFORD,CA 94305
STANFORD UNIV,INTEGRATED CIRCUITS LAB,STANFORD,CA 94305
PLUMMER, JD
HO, CP
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,INTEGRATED CIRCUITS LAB,STANFORD,CA 94305
STANFORD UNIV,INTEGRATED CIRCUITS LAB,STANFORD,CA 94305
HO, CP
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1978,
125
(02)
: 339
-
346
[5]
RATES OF FORMATION OF THERMAL OXIDES OF SILICON
EVITTS, HC
论文数:
0
引用数:
0
h-index:
0
EVITTS, HC
COOPER, HW
论文数:
0
引用数:
0
h-index:
0
COOPER, HW
FLASCHEN, SS
论文数:
0
引用数:
0
h-index:
0
FLASCHEN, SS
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1964,
111
(06)
: 688
-
690
[6]
SURFACE PROTECTION AND SELECTIVE MASKING DURING DIFFUSION IN SILICON
FROSCH, CJ
论文数:
0
引用数:
0
h-index:
0
FROSCH, CJ
DERICK, L
论文数:
0
引用数:
0
h-index:
0
DERICK, L
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1957,
104
(09)
: 547
-
552
[7]
KINETICS OF THERMAL-OXIDATION OF SILICON IN O2-HCL MIXTURES
HESS, DW
论文数:
0
引用数:
0
h-index:
0
机构:
FAIRCHILD CAMERA & INSTR CORP,RES & DEV LAB,PALO ALTO,CA 94304
FAIRCHILD CAMERA & INSTR CORP,RES & DEV LAB,PALO ALTO,CA 94304
HESS, DW
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
机构:
FAIRCHILD CAMERA & INSTR CORP,RES & DEV LAB,PALO ALTO,CA 94304
FAIRCHILD CAMERA & INSTR CORP,RES & DEV LAB,PALO ALTO,CA 94304
DEAL, BE
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1977,
124
(05)
: 735
-
739
[8]
KINETICS OF THERMAL GROWTH OF HCI-O2 OXIDES ON SILICON
HIRABAYA.K
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO SHIBAURA ELECT CO LTD,TOSHIBA RES & DEV CTR,KAWASAKI 210,JAPAN
TOKYO SHIBAURA ELECT CO LTD,TOSHIBA RES & DEV CTR,KAWASAKI 210,JAPAN
HIRABAYA.K
IWAMURA, J
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO SHIBAURA ELECT CO LTD,TOSHIBA RES & DEV CTR,KAWASAKI 210,JAPAN
TOKYO SHIBAURA ELECT CO LTD,TOSHIBA RES & DEV CTR,KAWASAKI 210,JAPAN
IWAMURA, J
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1973,
120
(11)
: 1595
-
1601
[9]
EFFECT OF HCL AND CL2 ON THERMAL OXIDATION OF SILICON
KRIEGLER, RJ
论文数:
0
引用数:
0
h-index:
0
KRIEGLER, RJ
CHENG, YC
论文数:
0
引用数:
0
h-index:
0
CHENG, YC
COLTON, DR
论文数:
0
引用数:
0
h-index:
0
COLTON, DR
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1972,
119
(03)
: 388
-
&
[10]
KRIEGLER RJ, 1973, DENKI KAGAKU, V41, P466
←
1
2
→
共 18 条
[1]
STABILIZATION OF SILICON SURFACES BY THERMALLY GROWN OXIDES
ATALLA, MM
论文数:
0
引用数:
0
h-index:
0
ATALLA, MM
TANNENBAUM, E
论文数:
0
引用数:
0
h-index:
0
TANNENBAUM, E
SCHEIBNER, EJ
论文数:
0
引用数:
0
h-index:
0
SCHEIBNER, EJ
[J].
BELL SYSTEM TECHNICAL JOURNAL,
1959,
38
(03):
: 749
-
783
[2]
Burgess R.R., 1973, SEMICONDUCTOR SILICO, P363
[3]
GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
DEAL, BE
GROVE, AS
论文数:
0
引用数:
0
h-index:
0
GROVE, AS
[J].
JOURNAL OF APPLIED PHYSICS,
1965,
36
(12)
: 3770
-
&
[4]
KINETICS OF THERMAL-OXIDATION OF SILICON IN O2/H2O AND O2/CL2 MIXTURES
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,INTEGRATED CIRCUITS LAB,STANFORD,CA 94305
STANFORD UNIV,INTEGRATED CIRCUITS LAB,STANFORD,CA 94305
DEAL, BE
HESS, DW
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,INTEGRATED CIRCUITS LAB,STANFORD,CA 94305
STANFORD UNIV,INTEGRATED CIRCUITS LAB,STANFORD,CA 94305
HESS, DW
PLUMMER, JD
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,INTEGRATED CIRCUITS LAB,STANFORD,CA 94305
STANFORD UNIV,INTEGRATED CIRCUITS LAB,STANFORD,CA 94305
PLUMMER, JD
HO, CP
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,INTEGRATED CIRCUITS LAB,STANFORD,CA 94305
STANFORD UNIV,INTEGRATED CIRCUITS LAB,STANFORD,CA 94305
HO, CP
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1978,
125
(02)
: 339
-
346
[5]
RATES OF FORMATION OF THERMAL OXIDES OF SILICON
EVITTS, HC
论文数:
0
引用数:
0
h-index:
0
EVITTS, HC
COOPER, HW
论文数:
0
引用数:
0
h-index:
0
COOPER, HW
FLASCHEN, SS
论文数:
0
引用数:
0
h-index:
0
FLASCHEN, SS
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1964,
111
(06)
: 688
-
690
[6]
SURFACE PROTECTION AND SELECTIVE MASKING DURING DIFFUSION IN SILICON
FROSCH, CJ
论文数:
0
引用数:
0
h-index:
0
FROSCH, CJ
DERICK, L
论文数:
0
引用数:
0
h-index:
0
DERICK, L
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1957,
104
(09)
: 547
-
552
[7]
KINETICS OF THERMAL-OXIDATION OF SILICON IN O2-HCL MIXTURES
HESS, DW
论文数:
0
引用数:
0
h-index:
0
机构:
FAIRCHILD CAMERA & INSTR CORP,RES & DEV LAB,PALO ALTO,CA 94304
FAIRCHILD CAMERA & INSTR CORP,RES & DEV LAB,PALO ALTO,CA 94304
HESS, DW
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
机构:
FAIRCHILD CAMERA & INSTR CORP,RES & DEV LAB,PALO ALTO,CA 94304
FAIRCHILD CAMERA & INSTR CORP,RES & DEV LAB,PALO ALTO,CA 94304
DEAL, BE
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1977,
124
(05)
: 735
-
739
[8]
KINETICS OF THERMAL GROWTH OF HCI-O2 OXIDES ON SILICON
HIRABAYA.K
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO SHIBAURA ELECT CO LTD,TOSHIBA RES & DEV CTR,KAWASAKI 210,JAPAN
TOKYO SHIBAURA ELECT CO LTD,TOSHIBA RES & DEV CTR,KAWASAKI 210,JAPAN
HIRABAYA.K
IWAMURA, J
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO SHIBAURA ELECT CO LTD,TOSHIBA RES & DEV CTR,KAWASAKI 210,JAPAN
TOKYO SHIBAURA ELECT CO LTD,TOSHIBA RES & DEV CTR,KAWASAKI 210,JAPAN
IWAMURA, J
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1973,
120
(11)
: 1595
-
1601
[9]
EFFECT OF HCL AND CL2 ON THERMAL OXIDATION OF SILICON
KRIEGLER, RJ
论文数:
0
引用数:
0
h-index:
0
KRIEGLER, RJ
CHENG, YC
论文数:
0
引用数:
0
h-index:
0
CHENG, YC
COLTON, DR
论文数:
0
引用数:
0
h-index:
0
COLTON, DR
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1972,
119
(03)
: 388
-
&
[10]
KRIEGLER RJ, 1973, DENKI KAGAKU, V41, P466
←
1
2
→