PHOSPHORUS DIFFUSION INTO SILICON USING PHOSPHINE

被引：4

作者：

HEYNES, MSR

VANLOON, PGG

机构：

[1] Signetics Corporation, Sunnyvale, California

[2] Union Carbide Corporation, Electronics Division, San Diego, California

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1969年 / 116卷 / 06期

关键词：

diffusion; phosphine; phosphorus;

D O I：

10.1149/1.2412119

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Phosphine (PH3) was used as a diffusion source under both reducing and oxidizing conditions. Erratic results were obtained under reducing conditions using up to 1% PH3. In an oxidizing ambient, solid solubility limited results were reproducibly obtained from 750° to 1200°C; PH3 concentrations from 0.1 to 2.0% were used. The presence of water resulting from the oxidation of PH3 does not appear to be of significance. No difficulty was experienced in applying phosphine diffusion to device fabrication. © 1969, The Electrochemical Society, Inc. All rights reserved.

引用

页码：890 / &

共 8 条

[1] DIFFUSION OF PHOSPHORUS INTO SILICON UNDER CONDITIONS OF CONTROLLED VAPOUR PRESSURE [J].