OXIDE ION CONDUCTORS BASED ON BISMUTHSESQUIOXIDE

被引:340
作者
TAKAHASHI, T
IWAHARA, H
机构
关键词
D O I
10.1016/0025-5408(78)90138-1
中图分类号
T [工业技术];
学科分类号
08 ;
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页码:1447 / 1453
页数:7
相关论文
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[16]   HIGH OXIDE ION CONDUCTION IN SINTERED OXIDE OF SYSTEM BI2O3-M2O5 [J].
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Takahashi T., 1972, J APPL ELECTROCHEM, P97, DOI [10.1007/BF00609125, DOI 10.1007/BF00609125]
[18]  
Takahashi T., 1973, J APPL ELECTROCHEM, V3, P65
[19]  
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