SCHOTTKY BARRIER COLD CATHODE

被引：3

作者：

STOLTE, CA

VILMS, J

ARCHER, RJ

机构：

[1] Hewlett-Packard Laboratories, Palo Alto

来源：

SOLID-STATE ELECTRONICS | 1969年 / 12卷 / 12期

关键词：

D O I：

10.1016/0038-1101(69)90015-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Cathodic vacuum emission from forward biased, rectifying contacts between n-type GaP, ZnSe and ZnS and thin Ag films covered with a monolayer of Cs agrees with a simple theory which assumes isotropic scattering of hot electrons on transmission through the interface between the semiconductor and the Ag. The maximum measured emission efficiency is 6 × 10-3 per cent but at least 2 per cent is expected with further development. © 1969.

引用

页码：945 / &

共 17 条

[1]

ARCHER RJ, 1968, AFCRL680651 AIR FORC

[2]

ARCHER RJ, 1968, AFCRL680447 AIR FORC

[3]

ARCHER RJ, 1968, AFCRL680302 AIR FORC

[4]

ARCHER RJ, 1968, AFCRL680122 AIR FORC

[5]

ATALLA MM, 1967, 2 MIKR TAG INT EL AR, P138

[6]

ATALLA MM, 1964, Patent No. 3121809

[7] PURIFICATION OF II-VI-COMPOUNDS BY SOLVENT EXTRACTION [J].

AVEN, M ;

WOODBURY, HH .

APPLIED PHYSICS LETTERS, 1962, 1 (03) :53-54

[8] The analysis of photoelectric sensitivity curves for clean metals at various temperatures [J].

Fowler, RH .

PHYSICAL REVIEW, 1931, 38 (01) :45-56

[9] A PROPOSED P-N JUNCTION CATHODE [J].

GEPPERT, DV .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (01) :61-&

[10]

GEPPERT DV, 1964, Patent No. 3150282

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