NONLINEAR GAIN EFFECTS IN STRAINED-LAYER LASERS

被引：11

作者：

GHITI, A

OREILLY, EP

机构：

[1] Department of Physics, University of Surrey, Guildford

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 23期

关键词：

Nonlinearities; Semiconductor lasers;

D O I：

10.1049/el:19901279

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effects of nonlinear gain on the dynamics of a semiconductor laser in which the active region consists of a strainedlayer structure are presented. Gain suppression is enhanced in the presence of strain, thus reducing the relaxation oscillation frequency in strained-layer lasers at very high optical powers compared with equivalent unstrained structures. © 1990, The Institution of Electrical Engineers. All rights reserved.

引用

页码：1978 / 1980

页数：3

共 9 条

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