SUPERCONDUCTIVITY OF ULTRATHIN BI-SR-CA-CU-O FILMS PREPARED BY MOCVD

The temperature dependence of J(c), and the magnetic field dependence of resistive transition and J(c) were measured for the 5 nm thick Bi-Sr-Ca-Cu-O films prepared by MOCVD (metalorganic chemical vapor deposition). The temperature dependence of J(c) for the 5 nm film was like that for S-N-S junctions. The resistive transition and the J(c) were found to be field-independent up to 6 T in the parallel case to the film surface, while dissipated in the perpendicular case to the film surface.