KINETICS AND MECHANISM OF AMORPHOUS HYDROGENATED SILICON GROWTH BY HOMOGENEOUS CHEMICAL VAPOR-DEPOSITION

被引：112

作者：

SCOTT, BA

PLECENIK, RM

SIMONYI, EE

机构：

来源：

APPLIED PHYSICS LETTERS | 1981年 / 39卷 / 01期

关键词：

D O I：

10.1063/1.92521

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：73 / 75

页数：3

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