KINETICS AND MECHANISM OF AMORPHOUS HYDROGENATED SILICON GROWTH BY HOMOGENEOUS CHEMICAL VAPOR-DEPOSITION

被引：112

作者：

SCOTT, BA

PLECENIK, RM

SIMONYI, EE

机构：

来源：

关键词：

D O I：

10.1063/1.92521

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：73 / 75

页数：3

共 17 条

[11] REIMER JA, UNPUBLISHED
[12] RING MA, 1977, HOMOATOMIC RINGS CHA
[13] GLOW-DISCHARGE PREPARATION OF AMORPHOUS HYDROGENATED SILICON FROM HIGHER SILANES
SCOTT, BA
BRODSKY, MH
GREEN, DC
KIRBY, PB
PLECENIK, RM
SIMONYI, EE
[J]. APPLIED PHYSICS LETTERS, 1980, 37 (08) : 725 - 727
[14] INFRARED-SPECTRUM AND STRUCTURE OF HYDROGENATED AMORPHOUS-SILICON
SHANKS, H
FANG, CJ
LEY, L
CARDONA, M
DEMOND, FJ
KALBITZER, S
[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1980, 100 (01): : 43 - 56
[15] SLADEK KJ, 1971, J ELECTROCHEM SOC, V118, P655
[16] POST-HYDROGENATION OF CVD DEPOSITED A-SI FILMS
SOL, N
KAPLAN, D
DIEUMEGARD, D
DUBREUIL, D
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) : 291 - 296
[17] SUBSTITUTIONAL DOPING OF CHEMICALLY VAPOR-DEPOSITED AMORPHOUS SILICON
TANIGUCHI, M
HIROSE, M
OSAKA, Y
[J]. JOURNAL OF CRYSTAL GROWTH, 1978, 45 (01) : 126 - 131