ELECTRON-STATES ASSOCIATED WITH PARTIAL DISLOCATIONS IN SILICON

被引：113

作者：

MARKLUND, S

机构：

[1] Department of Theoretical Physics, Umeå University

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1979年 / 92卷 / 01期

关键词：

D O I：

10.1002/pssb.2220920110

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The electron energy bands associated with the glide set 90° and 30° partials in silicon are calculated. Rotations of bonds and shifts in bond lengths are taken into account. The results suggest the possibility of dislocation cores without broken bonds. Copyright © 1979 WILEY‐VCH Verlag GmbH & Co. KGaA

引用

页码：83 / 89

页数：7

共 15 条

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