CHARACTERIZATION OF INTERFACE TOPOGRAPHY OF THE BURIED SI-SIO2 INTERFACE IN SILICON-ON-INSULATOR MATERIAL BY ATOMIC-FORCE MICROSCOPY

被引：10

作者：

CROWDER, SW

GRIFFIN, PB

PLUMMER, JD

机构：

[1] Integrated Circuits Laboratory, Stanford University, Stanford

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 13期

关键词：

D O I：

10.1063/1.112968

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Atomic force microscopy (AFM) has been used to characterize the topography of the buried Si-SiO2 interface in Bonded, single-implant Separation by IMplantation of OXygen (SIMOX), and multiple-implant SIMOX silicon-on-insulator material. The properties of this interface have important implications for processing and for device performance. The root-mean-square surface roughness was found to be 11.4 nm for single-implant material, 2.9 nm for multiple-implant material, and less than 1.5 nm for bonded material.

引用

页码：1698 / 1699

页数：2