NOVEL HEMT LAYOUT - THE ROUNDHEMT

被引：13

作者：

MARSO, M

SCHIMPF, K

FOX, A

VANDERHART, A

HARDTDEGEN, H

HOLLFELDER, M

KORDOS, P

LUTH, H

机构：

[1] Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH

来源：

ELECTRONICS LETTERS | 1995年 / 31卷 / 07期

关键词：

HIGH ELECTRON MOBILITY TRANSISTORS; SEMICONDUCTOR DEVICE CHARACTERIZATION; SEMICONDUCTOR TECHNOLOGY;

D O I：

10.1049/el:19950367

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel HEMT layout with ringshaped gate is reported. This conception avoids the problems related to mesa etching at the active region and provides additional possibilities for circuit design. The layer structure of the investigated device is based on an Al-free InP/InGaAs material system. Transistors with a gate length of 0.7 mu m show an f(T) of 40GHz and an f(max) of 117GHz. These values are similar to results obtained with the conventional HEMT design.

引用

页码：589 / 591

页数：3

共 5 条

[1] MESA-SIDEWALL GATE LEAKAGE IN INALAS INGAAS HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS [J].