EPITAXIAL GROWTH OF INP ON GAAS IN AN OPEN FLOW SYSTEM

[1] PREPARATION OF CRYSTALS OF INAS, INP, GAAS, AND GAP BY A VAPOR PHASE REACTION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1959, 106 (06) : 509 - 511

[2] EPITAXIAL GROWTH OF DOPED AND PURE GAAS IN AN OPEN FLOW SYSTEM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (10) : 1020 - &

[3] GOLDSMITH N, 1963, RCA REV, V24, P546

[4] IIZIMA S, 1962, J CHEM SOC JAPAN IC, V65, P1722

[5] ING SW, 1962, J ELECTROCHEM SOC, V109, P995

[6] PREPARATION OF EPITAXIAL GAAS AND GAP FILMS BY VAPOR PHASE REACTION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (11) : 1061 - 1065

[7] N-N SEMICONDUCTOR HETEROJUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1963, 6 (02) : 121 - 132

[8] WOLFF G, 1954, PHYS REV, V94, P753

[1] PREPARATION OF CRYSTALS OF INAS, INP, GAAS, AND GAP BY A VAPOR PHASE REACTION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1959, 106 (06) : 509 - 511

[2] EPITAXIAL GROWTH OF DOPED AND PURE GAAS IN AN OPEN FLOW SYSTEM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (10) : 1020 - &

[3] GOLDSMITH N, 1963, RCA REV, V24, P546

[4] IIZIMA S, 1962, J CHEM SOC JAPAN IC, V65, P1722

[5] ING SW, 1962, J ELECTROCHEM SOC, V109, P995

[6] PREPARATION OF EPITAXIAL GAAS AND GAP FILMS BY VAPOR PHASE REACTION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (11) : 1061 - 1065

[7] N-N SEMICONDUCTOR HETEROJUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1963, 6 (02) : 121 - 132

[8] WOLFF G, 1954, PHYS REV, V94, P753