ELECTRON-ELECTRON EFFECTS IN WRITING AND ERASING OF DUAL-DIELECTRIC CHARGE-STORAGE CELLS

被引：7

作者：

THORNBER, KK

KAHNG, D

机构：

来源：

APPLIED PHYSICS LETTERS | 1978年 / 32卷 / 03期

关键词：

D O I：

10.1063/1.89972

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：131 / 133

页数：3

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[1] CHARGE TRANSPORT AND STORAGE IN METAL-NITRIDE-OXIDE-SILICON (MNOS) STRUCTURES
FROHMANB.D
LENZLINGER, M
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (08) : 3307 - +
[2] INTERFACIAL DOPANTS FOR DUAL-DIELECTRIC, CHARGE-STORAGE CELLS
KAHNG, D
SUNDBURG, WJ
BOULIN, DM
LIGENZA, JR
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1974, 53 (09): : 1723 - 1739
[3] METHOD OF TUNGSTEN DOPANT DEPOSITION FOR DUAL-DIELECTRIC CHARGE-STORAGE CELLS
LIGENZA, JR
KAHNG, D
LEPSELTER, MP
LABATE, E
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (05) : 581 - 583
[4] THORNBER KK, UNPUBLISHED
[5] ELECTRON-TRAPPING CHARACTERISTICS OF W IN SIO2
YOUNG, DR
DIMARIA, DJ
BOJARCZUK, NA
[J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (08) : 3425 - 3427