CRYSTAL-STRUCTURE EFFECTS IN VALENCE BAND OF DEFECT ZINCBLEND SEMICONDUCTOR CDIN2SE4

被引：12

作者：

PICCO, P

ABBATI, I

BRAICOVICH, L

CERRINA, F

LEVY, F

MARGARITONDO, G

机构：

[1] IST FIS POLITECN, MILAN, ITALY

[2] PULS, NAZL FRASCATI LAB, ROME, ITALY

[3] ECOLE POLYTECH FED LAUSANNE, IST PHYS APPL, CH-1007 LAUSANNE, SWITZERLAND

来源：

PHYSICS LETTERS A | 1978年 / 65卷 / 5-6期

关键词：

D O I：

10.1016/0375-9601(78)90467-X

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：447 / 449

页数：3

共 13 条

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[9] TOTAL VALENCE-BAND DENSITIES OF STATES OF III-V AND II-VI COMPOUNDS FROM X-RAY PHOTOEMISSION SPECTROSCOPY [J].

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PHYSICAL REVIEW B, 1977, 15 (08) :3844-3854

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