SIMPLE TECHNIQUE FOR MEASURING THE INJECTION CURRENT-INDUCED FREQUENCY DEVIATION OF SEMICONDUCTOR-LASERS

被引：2

作者：

CHUNG, YC ^{[1
]}

SHAY, TM ^{[1
]}

机构：

[1] UTAH STATE UNIV,DEPT ELECT ENGN,LOGAN,UT 84322

来源：

APPLIED OPTICS | 1989年 / 28卷 / 04期

关键词：

D O I：

10.1364/AO.28.000648

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

引用

页码：648 / 649

页数：2

共 8 条

[1] 450-HZ RELATIVE FREQUENCY STABILITY IN AN ALGAAS DIODE-LASER [J].

CHUNG, YC ;

SHAY, TM .

ELECTRONICS LETTERS, 1987, 23 (20) :1044-1045

[2] CURRENT-INDUCED FREQUENCY-MODULATION IN DIODE-LASERS [J].

DANDRIDGE, A ;

GOLDBERG, L .

ELECTRONICS LETTERS, 1982, 18 (07) :302-304

[3] CURRENT FREQUENCY-MODULATION CHARACTERISTICS FOR DIRECTLY OPTICAL FREQUENCY-MODULATED INJECTION-LASERS AT 830-NM AND 1.3-MU-M [J].

JACOBSEN, G ;

OLESEN, H ;

BIRKEDAHL, F ;

TROMBORG, B .

ELECTRONICS LETTERS, 1982, 18 (20) :874-876

[4] WAVELENGTH VARIATION OF 1.6 MU-M WAVELENGTH BURIED HETEROSTRUCTURE GAINASP INP LASERS DUE TO DIRECT MODULATION [J].

KISHINO, K ;

AOKI, S ;

SUEMATSU, Y .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (03) :343-351

[5]

Kobasyashi S., 1982, IEEE T MICROW THEORY, V30, P428, DOI DOI 10.1109/tmtt.1982.1131084

[6] MODULATION FREQUENCY-CHARACTERISTICS OF DIRECTLY OPTICAL FREQUENCY MODULATED ALGAAS SEMICONDUCTOR-LASER [J].

KOBAYASHI, S ;

YAMAMOTO, Y ;

KIMURA, T .

ELECTRONICS LETTERS, 1981, 17 (10) :350-351

[7]

SHAY TM, 1987, C LASERS ELECTROOPTI

[8] A NOVEL TECHNIQUE FOR MEASURING THE FREQUENCY DEVIATION OF SEMICONDUCTOR-LASERS UNDER DIRECT MODULATION [J].

TSUCHIDA, H ;

TAKO, T ;

OHTSU, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (01) :L19-L21

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