DIRECTIONAL EJECTION OF FAST EXCITED SI ATOMS DURING 10 KEV AR+ ION-BOMBARDMENT

被引：12

作者：

BONANNO, A ^{[1
]}

XU, F ^{[1
]}

CAMARCA, M ^{[1
]}

SICILIANO, R ^{[1
]}

OLIVA, A ^{[1
]}

机构：

[1] CISM COSENZA,GNSM,I-87036 COSENZA,ITALY

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1990年 / 48卷 / 1-4期

关键词：

D O I：

10.1016/0168-583X(90)90142-H

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Incidence- and detection-angle-resolved Auger spectroscopy has been used to study the spatial and energetic distribution of sputtered energetic Si(*) target atoms during 10 keV Ar+ ion bombardment. The fast-moving Si neutrals and ions with an inner-shell hole de-excite outside the sample emitting characteristic atomic-like Auger electrons which are Doppler-shifted with respect to those emitted from slow-moving sputtered Si species. The results show that for a given incidence angle the Doppler shift assumes a positive maximum at a particular detection angle and decreases on both sides away from it even to reach negative values, and that this direction exhibits a strong dependence on the ion incidence angle. Our experimental findings suggest that the flux of the ejected excited energetic Si particles is higher directional and provide convincing evidence that the primary asymmetric collisions between Ar and Si are an important mechanism for Si 2p hole creation. © 1990.

引用

页码：371 / 374

页数：4

共 13 条

[1] AUGER-ELECTRON EMISSION FROM THE DECAY OF COLLISIONALLY-EXCITED ATOMS SPUTTERED FROM AL AND SI [J].