PHOTOLUMINESCENCE INVESTIGATIONS OF DEFECTS INTRODUCED DURING PROCESSING OF MERCURIC IODIDE NUCLEAR-DETECTORS

被引：11

作者：

JAMES, RB

BAO, XJ

SCHLESINGER, TE

CHENG, AY

ORTALE, C

VANDENBERG, L

机构：

[1] CARNEGIE MELLON UNIV,DEPT ELECT & COMP ENGN,PITTSBURGH,PA 15213

[2] EG&G ENERGY MEASUREMENTS INC,GOLETA,CA 93116

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1992年 / 322卷 / 03期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/0168-9002(92)91210-Z

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Low-temperature photoluminescence (PL) spectroscopy was performed on a variety of HgI2 samples to determine the effects of chemical etching with KI and HNO3 solutions and the modifications in the PL spectra due to the presence of carbon, chromium and parylene films. These investigations reveal that the processing steps used to manufacture HgI2 nuclear detectors can lead to the incorporation of new defects into the near-surface region of the crystals. Moreover, correlations between the photoluminescence spectra and detector performance show that some of these defects are undesirable for producing high-quality devices.

引用

页码：435 / 441

页数：7

共 30 条

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