DIFFUSION OF INDIUM IN HG1-XCDXTE

[1] Hansen M., 1958, J ELECTROCHEM SOC, DOI DOI 10.1149/1.2428700

[2] DOPING PROPERTIES OF SELECTED IMPURITIES IN HG1-XCDXTE [J]. JOURNAL OF ELECTRONIC MATERIALS, 1977, 6 (01) : 25 - 38

[3] Kr??ger F., 1973, CHEM IMPERFECT CRYST

[4] LONG D, 1977, TOPICS APPLIED PHYSI, V19

[5] THEORY OF AN EXPERIMENT FOR MEASURING THE MOBILITY AND DENSITY OF CARRIERS IN THE SPACE-CHARGE REGION OF A SEMICONDUCTOR SURFACE [J]. PHYSICAL REVIEW, 1958, 110 (06): : 1254 - 1262

[6] INTRINSIC CARRIER CONCENTRATION OF HG1-CHICDCHITE AS A FUNCTION OF CHI AND T USING K-P CALCULATIONS [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (07) : 2876 - &

[7] Tuck B., 1974, INTRO DIFFUSION SEMI

[8] van der Pauw L. J., 1958, PHILIPS RES REP, V1958, P1

[9] ZANIO K, 1978, SEMICONDUCTORS SEMIM, V13

[1] Hansen M., 1958, J ELECTROCHEM SOC, DOI DOI 10.1149/1.2428700

[2] DOPING PROPERTIES OF SELECTED IMPURITIES IN HG1-XCDXTE [J]. JOURNAL OF ELECTRONIC MATERIALS, 1977, 6 (01) : 25 - 38

[3] Kr??ger F., 1973, CHEM IMPERFECT CRYST

[4] LONG D, 1977, TOPICS APPLIED PHYSI, V19

[5] THEORY OF AN EXPERIMENT FOR MEASURING THE MOBILITY AND DENSITY OF CARRIERS IN THE SPACE-CHARGE REGION OF A SEMICONDUCTOR SURFACE [J]. PHYSICAL REVIEW, 1958, 110 (06): : 1254 - 1262

[6] INTRINSIC CARRIER CONCENTRATION OF HG1-CHICDCHITE AS A FUNCTION OF CHI AND T USING K-P CALCULATIONS [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (07) : 2876 - &

[7] Tuck B., 1974, INTRO DIFFUSION SEMI

[8] van der Pauw L. J., 1958, PHILIPS RES REP, V1958, P1

[9] ZANIO K, 1978, SEMICONDUCTORS SEMIM, V13