NONLOCAL AND NONLINEAR TRANSPORT IN SEMICONDUCTORS - REAL-SPACE TRANSFER EFFECTS

被引：95

作者：

GRIBNIKOV, ZS

HESS, K

KOSINOVSKY, GA

机构：

[1] UNIV ILLINOIS, BECKMAN INST ADV SCI & TECHNOL, URBANA, IL 61801 USA

[2] UNIV ILLINOIS, COORDINATED SCI LAB, URBANA, IL 61801 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1995年 / 77卷 / 04期

关键词：

D O I：

10.1063/1.358947

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The contributions of nonlocal mechanisms to nonlinear transport in semiconductors, with special emphasis on hot-electron emission at heterojunctions and its variations which are now commonly termed real-space transfer effects, are reviewed. The goal is to equitably account for and bring together the body of literature that has developed, often independently, in the U.S. and the former Soviet Union as well as in Europe and Japan. © 1995 American Institute of Physics.

引用

页码：1337 / 1373

页数：37

共 182 条

[11]

BALKAN N, IN PRESS NEGATIVE DI

[12]

BAREIKIS V, COMMUNICATION

[13]

Bass F. G., 1975, HOT ELECTRONS STRONG

[14] COLLECTOR-UP LIGHT-EMITTING CHARGE INJECTION TRANSISTORS IN N-INGAAS/INALAS/P-INGAAS AND N-INGAAS/INP/P-INGAAS HETEROSTRUCTURES [J].