IMPACT IONIZATION AND CHARGE TRANSPORT IN GAAS-GAP 50 PERCENT ALLOY

被引：7

作者：

WILLIAMS, R

机构：

来源：

关键词：

D O I：

10.1063/1.1655779

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：57 / &

共 13 条

ADOLPH, J ;

BALDINGER, E ;

GRANACHER, I .

PHYSICS LETTERS, 1964, 8 (04) :224-225

[2] DOUBLE INJECTION IN DEEP-LYING IMPURITY SEMICONDUCTORS [J].

ASHLEY, KL ;

MILNES, AG .

[3]

CHYNOWETH AG, 1960, PROGRESS SEMICONDUCT, V4, P97

[4] LICHTEMPFINDLICHE RAUMLADUNGSBESCHRANKTE STROME [J].

HELFRICH, W .

PHYSICA STATUS SOLIDI, 1964, 7 (03) :863-868

[5]

KRESSEL H, 1966, J ELECTRON, V20, P535

[6] VOLUME-CONTROLLED CURRENT INJECTION IN INSULATORS [J].

LAMPERT, MA .

LAMPERT, MA .

PHYSICAL REVIEW, 1956, 103 (06) :1648-1656

[8] CHARGE MULTIPLICATION IN GAP-P-N-JUNCTIONS [J].

LOGAN, RA ;

CHYNOWETH, AG .

[9] SPACE-CHARGE-LIMITED CURRENTS IN SOLIDS [J].

ROSE, A .

PHYSICAL REVIEW, 1955, 97 (06) :1538-1544

[10]

ROSE A, 1963, CONCEPTS PHOTOCONDUC, pCH7