SHIFT OF GATE THRESHOLD VOLTAGE OF MOS TRANSISTORS DNE TO INTRODUCTION OF SHALLOW IMPURITIES

被引：26

作者：

TANAKA, T

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1971年 / 10卷 / 01期

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D O I：

10.1143/JJAP.10.84

中图分类号：

O59 [应用物理学];

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页码：84 / +

页数：1

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[1] AUBUCHON KG, 1969, JUN INT C PROP US MI
[2] IGFET CIRCUIT PERFORMANCE - N-CHANNEL VERSUS P-CHANNEL
CHEROFF, G
CRITCHLOW, DL
DENNARD, RH
TERMAN, LM
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1969, SC 4 (05) : 267 - +
[3] OBSERVATION OF IMPURITY REDUSTRIBUTION DURING THERMAL OXIDATION OF SILICON USING MOS STRUCTURE
DEAL, BE
GROVE, AS
SNOW, EH
SAH, CT
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (03) : 308 - &
[4] HODGES DA, 1968, IEEE, V56, P1148
[5] MOS-FET FABRICATION PROBLEMS
KIM, MJ
[J]. SOLID-STATE ELECTRONICS, 1969, 12 (07) : 557 - +
[6] SURFACE CHARGE AND SURFACE POTENTIAL IN ARBITRARILY DOPED CRYSTALS
LINDMAYER, J
[J]. SOLID-STATE ELECTRONICS, 1963, 6 (02) : 137 - 140
[7] SOLID-SOLID DIFFUSION OF BORON IN SILICON USING REACTIVE SPUTTERING
NAGANO, K
IWAUCHI, S
TANAKA, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1968, 7 (11) : 1361 - &
[8] NAGANO K, 1966, FALL M JAP SOC APPL
[9] EFFECTS OF FIXED BULK CHARGE ON CHARACTERISTICS OF METAL-OXIDE-SEMICONDUCTOR TRANSISTORS
SAH, CT
PAO, HC
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (04) : 393 - +
[10] EFFECTS OF INTERFACE STATES ON CHARACTERISTICS OF MOS TRANSISTORS
TANAKA, T
IWAUCHI, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1968, 7 (12) : 1473 - +