EFFECT OF CARRIER DIFFUSION ON OPERATION OF AVALANCHE-DIODES

被引:12
作者
CULSHAW, B [1 ]
机构
[1] UCL, DEPT ELECT & ELECT ENGN, TORRINGTON PL, LONDON WC1E 7JE, ENGLAND
关键词
D O I
10.1049/el:19740110
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:143 / 145
页数:3
相关论文
共 7 条
[1]  
GIBLIN RA, 1973, IEEE T, VED20
[2]   CARRIER DIFFUSION IN SEMICONDUCTOR AVALANCHES [J].
KUVAS, R ;
LEE, CA .
JOURNAL OF APPLIED PHYSICS, 1970, 41 (07) :3108-&
[3]   HIGH-FIELD ENERGY DISTRIBUTION, MOBILITY, AND DIFFUSION OF HEAVY HOLES IN P-GERMANIUM [J].
PERSKY, G ;
BARTELINK, DJ .
PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (04) :1614-+
[4]   A PROPOSED HIGH-FREQUENCY, NEGATIVE-RESISTANCE DIODE [J].
READ, WT .
BELL SYSTEM TECHNICAL JOURNAL, 1958, 37 (02) :401-446
[5]   TRANSPORT PROPERTIES OF GAAS [J].
RUCH, JG ;
KINO, GS .
PHYSICAL REVIEW, 1968, 174 (03) :921-+
[6]  
SCHROEDER WE, 1973, P I ELEC ELECTRON EN, V61
[7]   DIFFUSIVITY OF ELECTRONS AND HOLES IN SILICON [J].
SIGMON, TW ;
GIBBONS, JF .
APPLIED PHYSICS LETTERS, 1969, 15 (10) :320-&