SCANNING TUNNELING MICROSCOPY STUDY OF DIFFUSION, GROWTH, AND COARSENING OF SI ON SI (001)

被引：150

作者：

MO, YW

KARIOTIS, R

SWARTZENTRUBER, BS

WEBB, MB

LAGALLY, MG

机构：

[1] University of Wisconsin-Madison, Madison

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1990年 / 8卷 / 01期

关键词：

D O I：

10.1116/1.577066

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The growth, diffusion, and coarsening of Si on Si (001) have been investigated with scanning tunneling microscopy (STM). A diffusion coefficient for Si has been determined. Anisotropy in the island shapes during epitaxy is shown to be principally a growth structure due to an anisotropic accommodation coefficient. Diffusional anisotropy is small. An ordered “diluted-dimer” structure is observed at low coverages and temperatures. © 1990, American Vacuum Society. All rights reserved.

引用

页码：201 / 206

页数：6

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