FLAT SURFACE CIRCULAR BURIED HETEROSTRUCTURE SURFACE EMITTING LASER WITH HIGHLY REFLECTIVE SI/SIO2 MIRRORS

被引：9

作者：

OSHIKIRI, M

KOYAMA, F

IGA, K

机构：

[1] Tokyo Institute of Technology, Precision and Intelligence Laboratory, Midoriku, Yokohama 227

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 22期

关键词：

SEMICONDUCTOR LASERS; LASERS;

D O I：

10.1049/el:19911262

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The threshold has been reduced and + 0.2-degrees-C pulsed operation (I(th) = 150 mA) has been obtained for a flat surface buried heterostructure 1.3-mu-m surface emitting laser. An in situ optical thickness monitor system was introduced into an electron beam evaporator to improve the optical thickness accuracy. 98-99% reflectivities have been obtained in Si/SiO2 multilayer reflectors.

引用

页码：2038 / 2039

页数：2

共 4 条

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[4]

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