GAINASP/INP SEMICONDUCTOR MULTILAYER REFLECTOR GRWON BY METALORGANIC CHEMICAL VAPOR-DEPOSITION AND ITS APPLICATION TO SURFACE EMITTING LASER DIODE

被引：25

作者：

IMAJO, Y

KASUKAWA, A

KASHIWA, S

OKAMOTO, H

机构：

[1] Optoelectronics Technology Research Corporation, c/o Yokohama R and D Laboratories, The Furukawa Electric Co Ltd., Nishi-ku, Yokohama, 220, 2-4-3, Okano

[2] Yokohama R and D Laboratories, The Furukawa Electric Co Ltd., Nishi-ku, Yokohama, 220, 2-4-3, Okano

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1990年 / 29卷 / 07期

关键词：

Galnasp/lnp; Mocvd; Room temperature pulse operation; Semiconductor multilayer reflector; Surface emitting laser;

D O I：

10.1143/JJAP.29.L1130

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A GaInAsP/InP multilayer reflector was fabricated by low pressure metalorganic chemical vapor deposition. Peak reflectivity of as high as 0.98 was obtained, which was in good agreement with the calculated value. This multilayer reflector was applied to a 1.5 µm GaInAsP/InP vertical cavity surface emitting laser diode, and room temperature pulsed oscillation was achieved for the first time with a threshold current density of 124 kA/cm2. © 1990 The Japan Society of Applied Physics.

引用

页码：L1130 / L1132

页数：3

共 13 条

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