GAALAS/GAAS SURFACE EMITTING LASER WITH HIGH REFLECTIVE TIO2/SIO2 MULTILAYER BRAGG REFLECTOR

被引：18

作者：

KINOSHITA, S

SAKAGUCHI, T

ODAGAWA, T

IGA, K

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1987年 / 26卷 / 03期

关键词：

D O I：

10.1143/JJAP.26.410

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：410 / 415

页数：6

共 10 条

[1] LASING CHARACTERISTICS OF DISTRIBUTED-FEEDBACK GAAS-GAALAS DIODE-LASERS WITH SEPARATE OPTICAL AND CARRIER CONFINEMENT
AIKI, K
NAKAMURA, M
UMEDA, JI
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1976, 12 (10) : 597 - 603
[2] [Anonymous], 1976, OPTICS THIN FILMS
[3] CASEY HC, 1978, HETEROSTRUCTURE LA A, P175
[4] ROOM-TEMPERATURE PULSED OSCILLATION OF GAALAS/GAAS SURFACE EMITTING JUNCTION LASER
IGA, K
ISHIKAWA, S
OHKOUCHI, S
NISHIMURA, T
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1985, 21 (06) : 663 - 668
[5] ROOM-TEMPERATURE PULSED OSCILLATION OF GAALAS GAAS SURFACE EMITTING INJECTION-LASER
IGA, K
ISHIKAWA, S
OHKOUCHI, S
NISHIMURA, T
[J]. APPLIED PHYSICS LETTERS, 1984, 45 (04) : 348 - 350
[6] 1.5-1.6-MU-M GALNASP/INP DYNAMIC-SINGLE-MODE (DSM) LASERS WITH DISTRIBUTED BRAGG REFLECTOR
KOYAMA, F
SUEMATSU, Y
ARAI, S
TAWEE, TE
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (06) : 1042 - 1051
[7] DISTRIBUTED FEED BACK SURFACE EMITTING LASER DIODE WITH MULTILAYERED HETEROSTRUCTURE
OGURA, M
HATA, T
YAO, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (07): : L512 - L514
[8] REFRACTIVE-INDEXES OF TIO2 FILMS PRODUCED BY REACTIVE EVAPORATION OF VARIOUS TITANIUM-OXYGEN PHASES
PULKER, HK
PAESOLD, G
RITTER, E
[J]. APPLIED OPTICS, 1976, 15 (12): : 2986 - 2991
[9] GAINASP-INP SURFACE EMITTING INJECTION-LASERS WITH SHORT CAVITY LENGTH
SODA, H
MOTEGI, Y
IGA, K
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (06) : 1035 - 1041
[10] GAINASP INP SURFACE EMITTING INJECTION-LASER WITH A RING ELECTRODE
UCHIYAMA, S
IGA, K
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1984, 20 (10) : 1117 - 1118

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