HIGH-EFFICIENCY ALGAINP-BASED 660-680 NM VERTICAL-CAVITY SURFACE-EMITTING LASERS

被引：13

作者：

CRAWFORD, MH

SCHNEIDER, RP

CHOQUETTE, KD

LEAR, KL

KILCOYNE, SP

FIGIEL, JJ

机构：

[1] Sandia National Laboratories, Albuquerque

来源：

ELECTRONICS LETTERS | 1995年 / 31卷 / 03期

关键词：

VERTICAL CAVITY SURFACE EMITTING LASERS; VISIBLE SEMICONDUCTOR LASERS;

D O I：

10.1049/el:19950124

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Record continuous-wave output power of 2.9 mW and 10% peak wallplug efficiency have been achieved from planar gain guided AlGaInP-based vertical-cavity surface emitting lasers. These results represent nearly an order of magnitude improvement in performance over previous AlGaInP-based vertical-cavity lasers.

引用

页码：196 / 198

页数：3

共 6 条

[1] DRIFT LEAKAGE CURRENT IN ALGAINP QUANTUM-WELL LASERS
BOUR, DP
TREAT, DW
THORNTON, RL
GEELS, RS
WELCH, DF
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1993, 29 (05) : 1337 - 1343
[2] LASING CHARACTERISTICS OF VISIBLE ALGAINP/ALGAAS VERTICAL-CAVITY LASERS
CHOQUETTE, KD
SCHNEIDER, RP
LOTT, JA
[J]. OPTICS LETTERS, 1994, 19 (13) : 969 - 971
[3] HUANG KF, 1993, ELECTRON LETT, V29, P1314
[4] ROOM-TEMPERATURE CONTINUOUS-WAVE OPERATION OF RED VERTICAL-CAVITY SURFACE-EMITTING LASER-DIODES
LOTT, JA
SCHNEIDER, RP
CHOQUETTE, KD
KILCOYNE, SP
FIGIEL, JJ
[J]. ELECTRONICS LETTERS, 1993, 29 (19) : 1693 - 1694
[5] LOTT JA, UUNPUB IEEE PHOTONIC
[6] SCHNEIDER RP, 1994, IEEE PHOTONIC TECH L, V5, P313

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