INGAAS/GAAS VERTICAL-CAVITY SURFACE-EMITTING LASERS ON (311)B GAAS SUBSTRATE

被引：26

作者：

KANEKO, Y ^{[1
]}

NAKAGAWA, S ^{[1
]}

TAKEUCHI, T ^{[1
]}

MARS, DE ^{[1
]}

YAMADA, N ^{[1
]}

MIKOSHIBA, N ^{[1
]}

机构：

[1] HEWLETT PACKARD CORP,PALO ALTO,CA 94304

来源：

ELECTRONICS LETTERS | 1995年 / 31卷 / 10期

关键词：

MOLECULAR BEAM EPITAXIAL GROWTH; VERTICAL CAVITY SURFACE EMITTING LASERS;

D O I：

10.1049/el:19950549

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

InGaAs/GaAs vertical cavity top-emitting dielectric-mirror surface-emitting lasers have been fabricated on a (311)B GaAs substrate. The threshold current was 25 mA at a lasing wavelength of 0.97 mu m under pulsed operation at room temperature. The output was linearly polarised in the [233] direction.

引用

页码：805 / 806

页数：2

共 5 条

[1] LOW-THRESHOLD HALF-WAVE VERTICAL-CAVITY LASERS [J].