LOW-THRESHOLD HALF-WAVE VERTICAL-CAVITY LASERS

被引：88

作者：

HUFFAKER, DL

SHIN, J

DEPPE, DG

机构：

[1] Microelectronics Research Center, Department of Electrical and Computer Engineering, University of Texas at Austin

来源：

ELECTRONICS LETTERS | 1994年 / 30卷 / 23期

关键词：

VERTICAL CAVITY SURFACE EMITTING LASERS; LASERS;

D O I：

10.1049/el:19941348

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Data are presented characterising half-wavelength vertical-cavity surface-emitting lasers defined by a native-oxide ring in which the native oxide is 200 angstrom from the single quantum well. The lowest threshold is achieved with a 2mum square active region, with a minimum threshold current of 91muA continuous-wave at room temperature.

引用

页码：1946 / 1947

页数：2

共 7 条

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[4] ZNSE/CAF2 QUARTER-WAVE BRAGG REFLECTOR FOR THE VERTICAL-CAVITY SURFACE-EMITTING LASER
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[6] NATIVE-OXIDE TOP-CONFINED AND BOTTOM-CONFINED NARROW STRIPE P-N ALYGA1-YAS-GAAS-INXGA1-XAS QUANTUM-WELL HETEROSTRUCTURE LASER
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[J]. APPLIED PHYSICS LETTERS, 1993, 63 (12) : 1660 - 1662
[7] RECORD LOW-THRESHOLD CURRENT IN MICROCAVITY SURFACE-EMITTING LASER
NUMAI, T
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1993, 32 (10B): : L1533 - L1534

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