NATIVE-OXIDE DEFINED RING CONTACT FOR LOW-THRESHOLD VERTICAL-CAVITY LASERS

被引：485

作者：

HUFFAKER, DL ^{[1
]}

DEPPE, DG ^{[1
]}

KUMAR, K ^{[1
]}

ROGERS, TJ ^{[1
]}

机构：

[1] MARTIN MARIETTA CORP,SYRACUSE,NY 13121

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 01期

关键词：

D O I：

10.1063/1.113087

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Data are presented characterizing a new process for fabrication of vertical-cavity surface-emitting lasers based on the selective conversion of high Al composition epitaxial AlGaAs to a stable native oxide using ''wet oxidation.'' The native oxide is used to form a ring contact to the laser active region. The resulting laser active regions have dimensions of 8, 4, and 2 mum. The lowest threshold laser is achieved with the 8-mum active region, with a minimum threshold current of 225-muA continuous wave at room temperature.

引用

页码：97 / 99

页数：3

共 14 条

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[2] HYDROLYZATION OXIDATION OF ALXGA1-XAS-ALAS-GAAS QUANTUM-WELL HETEROSTRUCTURES AND SUPERLATTICES
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[4] LOW-THRESHOLD CONTINUOUS-WAVE SURFACE-EMITTING LASERS WITH ETCHED VOID CONFINEMENT
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[5] OPTICAL MEMORY USING A VERTICAL-CAVITY SURFACE-EMITTING LASER
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[6] MODE DEPENDENCE ON MIRROR CONTRAST IN FABRY-PEROT MICROCAVITY LASERS
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[J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1994, 6 (02) : 135 - 138
[7] ZNSE/CAF2 QUARTER-WAVE BRAGG REFLECTOR FOR THE VERTICAL-CAVITY SURFACE-EMITTING LASER
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[8] NATIVE-OXIDE TOP-CONFINED AND BOTTOM-CONFINED NARROW STRIPE P-N ALYGA1-YAS-GAAS-INXGA1-XAS QUANTUM-WELL HETEROSTRUCTURE LASER
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[J]. APPLIED PHYSICS LETTERS, 1993, 63 (12) : 1660 - 1662
[9] SURFACE-EMITTING LASER OPERATION IN VERTICAL-TO-SURFACE TRANSMISSION ELECTROPHOTONIC DEVICES WITH A VERTICAL CAVITY
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[10] LOW-THRESHOLD VOLTAGE CONTINUOUS-WAVE VERTICAL-CAVITY SURFACE-EMITTING LASERS
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[J]. APPLIED PHYSICS LETTERS, 1993, 62 (17) : 2027 - 2029

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