LOW-THRESHOLD CONTINUOUS-WAVE SURFACE-EMITTING LASERS WITH ETCHED VOID CONFINEMENT

被引：39

作者：

HANSING, CC

DENG, H

HUFFAKER, DL

DEPPE, DG

STREETMAN, BG

SARATHY, J

机构：

[1] Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1994年 / 6卷 / 03期

关键词：

D O I：

10.1109/68.275477

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Data are presented demonstrating low threshold continuous wave operation of AlAs/GaAs/InGaAs vertical cavity surface emitting lasers. Continuous wave thresholds of 470 muA have been for device diameters of approximately 4mum, and 1.1 mA for a device diameter of 10 mum. A two-step molecular beam epitaxial growth process is used which results in a buried etched void surrounding the active cavity of the laser.

引用

页码：320 / 322

页数：3

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