ELECTRONIC MOBILITY IN SEMICONDUCTOR HETEROSTRUCTURES

被引：12

作者：

MENDEZ, EE

机构：

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1986年 / 22卷 / 09期

关键词：

D O I：

10.1109/JQE.1986.1073191

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1720 / 1727

页数：8

共 57 条

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[5]

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[10] ELECTRON MOBILITIES IN MODULATION-DOPED SEMICONDUCTOR HETEROJUNCTION SUPER-LATTICES [J].

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