DEPOSITION OF CO-CR FILMS BY MAGNETRON SPUTTERING WITH HIGHLY EFFICIENT TARGET UTILIZATION

A new type of magnetron sputtering method which can highly improve the utilization efficiency of Co-Cr alloy target and suppress the bombardment of high energy particles to substrate has been developed by forming the uniform magnetic flux confined in front of the target plane. The target utilization efficiencies in area and volume were as high as about 90% and 65%, respectively. Maximum deposition rate was about 0.26 µm/min. All Co-Cr films deposited by using this method were composed of hcp phase crystallites with c-axis orientation Δθ50 ranging from 8 to 14°. The easy direction of magnetization was perpendicular to the film plane. The saturation magnetization Ms and the perpendicular coercivity Hc⊥ are in the ranges of 400~550 emu/cc and more than 1000 0e, respectively. Accordingly, a plasma confining type of sputtering method may be useful for depositing Co-Cr films at high rate as well as high target utilization efficiency without damage by plasma. © 1990 IEEE