2-TERMINAL ASYMMETRICAL AND SYMMETRICAL SILICON NEGATIVE RESISTANCE SWITCHES

被引：30

作者：

ALDRICH, RW

HOLONYAK, N

机构：

来源：

关键词：

D O I：

10.1063/1.1735062

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1819 / 1824

页数：6

共 7 条

[1]

ALDRICH RF, UNPUBLISHED

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[3] 4-TERMINAL P-N-P-N-TRANSISTORS [J].

EBERS, JJ .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11) :1361-1364

[4]

JONSCHER AK, 1957, J ELECTRON CONTR, V3, P573

[5] THE ELECTRICAL CHARACTERISTICS OF SILICON P-N-P-N TRIODES [J].

MACKINTOSH, IM .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1958, 46 (06) :1229-1235

[6]

MOLL, 1956, P IRE, V44, P1174

[7]

SHOCKLEY W, 1958, SEMICONDUCTOR PRODUC, V1, P9