THE ELECTRICAL CHARACTERISTICS OF SILICON P-N-P-N TRIODES

被引：33

作者：

MACKINTOSH, IM

机构：

来源：

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS | 1958年 / 46卷 / 06期

关键词：

D O I：

10.1109/JRPROC.1958.286908

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1229 / 1235

页数：7

共 14 条

[1] 4-TERMINAL P-N-P-N-TRANSISTORS [J].

EBERS, JJ .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11) :1361-1364

[2]

KIDD MC, 1955, RCA REV, V16, P16

[3]

MACKINTOSH IM, 1958, IRE T ELECTRON DEVIC, V5, P10

[4] AVALANCHE BREAKDOWN IN SILICON [J].

MCKAY, KG .

PHYSICAL REVIEW, 1954, 94 (04) :877-884

[5] ELECTRON MULTIPLICATION IN SILICON AND GERMANIUM [J].

MCKAY, KG ;

MCAFEE, KB .

PHYSICAL REVIEW, 1953, 91 (05) :1079-1084

[6]

MILLER S, UNPUB

[7] ALLOYED JUNCTION AVALANCHE TRANSISTORS [J].

MILLER, SL ;

EBERS, JJ .

BELL SYSTEM TECHNICAL JOURNAL, 1955, 34 (05) :883-902

[8] P-N-P-N TRANSISTOR SWITCHES [J].

MOLL, JL ;

TANENBAUM, M ;

GOLDEY, JM ;

HOLONYAK, N .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1956, 44 (09) :1174-1182

[9]

Mueller C.W., 1958, IRE T ELECT DEVICES, V5, P2, DOI [10.1109/T-ED.1958.14318, DOI 10.1109/T-ED.1958.14318]

[10]

PHILIPS J, 1958, IRE T ELECTRON DEV, VED5, P13

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