EXTENSION OF IMPACT-IONIZATION MULTIPLICATION COEFFICIENT MEASUREMENTS TO HIGH ELECTRIC-FIELDS IN ADVANCED SI BJTS

被引：29

作者：

ZANONI, E

CRABBE, EF

STORK, JMC

PAVAN, P

VERZELLESI, G

VENDRAME, L

CANALI, C

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,DIV RES,YORKTOWN HTS,NY 10598

[2] UNIV MODENA,FAC INGN,I-41100 MODENA,ITALY

来源：

IEEE ELECTRON DEVICE LETTERS | 1993年 / 14卷 / 02期

关键词：

D O I：

10.1109/55.215111

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Measurements of the impact-ionization multiplication coefficient M - 1 in advanced Si BJT's up to values in excess of 10 (corresponding to a peak electric field at the base-collector junction of about 9 . 10(5) V/cm) are presented. The intrinsic limitations affecting M - 1 measurements at high electric fields are discussed. In particular, the fundamental role played by the negative base current and the parasitic base resistance in determining instabilities during M - 1 measurements is pointed out An accurate theoretical prediction of the M - 1 coefficient at collector-base voltages close to BV(CBO) requires that the contribution of holes to impact ionization be properly accounted for.

引用

页码：69 / 71

页数：3

共 10 条

[1]

Crabbe E. F., 1990, International Electron Devices Meeting 1990. Technical Digest (Cat. No.90CH2865-4), P463, DOI 10.1109/IEDM.1990.237067

[2] COUPLED-LANGEVIN-EQUATION ANALYSIS OF HOT-CARRIER TRANSPORT IN SEMICONDUCTORS [J].