学术探索
学术期刊
新闻热点
数据分析
智能评审

LATERAL AND VERTICAL ISOLATION BY ARSENIC IMPLANTATION INTO MOCVD-GROWN GAAS-LAYERS

被引：7
作者：
NAMAVAR, F
KALKHORAN, NM
CLAVERIE, A
LILIENTALWEBER, Z
WEBER, ER
SEKULAMOISE, PA
VERNON, S
HAVEN, V
机构：
[1] CNRS,CEMES,TOULOUSE,FRANCE
[2] LAWRENCE BERKELEY LAB,BERKELEY,CA 94720
[3] UNIV CALIF BERKELEY,BERKELEY,CA 94720
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1993年 / 22卷 / 12期
关键词：
ARSENIC IMPLANTATION; ARSENIC PRECIPITATES; GAAS INSULATING LAYERS; HIGH PACKING DENSITY;
D O I：
10.1007/BF02649987
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have demonstrated the formation of arsenic precipitates in GaAs using arsenic implantation and annealing. Electrical measurements show that very high resistivity (surface or buried) GaAs layers can be produced by this method. The arsenic-implanted materials are similar to GaAs:As buffer layers grown by low-temperature molecular beam epitaxy, which are used for eliminating backgating problems in GaAs circuits. Arsenic implantation is a nonepitaxial process which is compatible with current GaAs technology. Formation of insulating GaAs layers by this technique may improve the performance and packing density of GaAs integrated circuits, leading to advanced novel III-V compound-based technologies for high-speed and radiation-hard circuits.
引用
收藏
页码：1409 / 1412
页数：4
相关论文
共 8 条
[1]   FORMATION OF AS PRECIPITATES IN GAAS BY ION-IMPLANTATION AND THERMAL ANNEALING [J].
CLAVERIE, A ;
NAMAVAR, F ;
LILIENTALWEBER, Z .
APPLIED PHYSICS LETTERS, 1993, 62 (11) :1271-1273
[2]   SUBSTRATE-EPITAXIAL LAYER INTERFACE EFFECTS ON ALGAAS GAAS HETEROSTRUCTURE DEVICE PROPERTIES [J].
GRAY, ML ;
YODER, JD ;
BROTMAN, AD ;
CHANDRA, A ;
PARSEY, JM .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (04) :1930-1933
[3]   STOICHIOMETRY-RELATED DEFECTS IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY AT LOW-TEMPERATURES [J].
KAMINSKA, M ;
WEBER, ER ;
LILIENTALWEBER, Z ;
LEON, R ;
REK, ZU .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (04) :710-713
[4]   STRUCTURAL-PROPERTIES OF AS-RICH GAAS GROWN BY MOLECULAR-BEAM EPITAXY AT LOW-TEMPERATURES [J].
KAMINSKA, M ;
LILIENTALWEBER, Z ;
WEBER, ER ;
GEORGE, T ;
KORTRIGHT, JB ;
SMITH, FW ;
TSAUR, BY ;
CALAWA, AR .
APPLIED PHYSICS LETTERS, 1989, 54 (19) :1881-1883
[5]   BREAKDOWN OF CRYSTALLINITY IN LOW-TEMPERATURE-GROWN GAAS-LAYERS [J].
LILIENTALWEBER, Z ;
SWIDER, W ;
YU, KM ;
KORTRIGHT, J ;
SMITH, FW ;
CALAWA, AR .
APPLIED PHYSICS LETTERS, 1991, 58 (19) :2153-2155
[6]  
LILIENTALWEBER Z, 1993, IN PRESS ULTRAMICROS
[7]   NEW MBE BUFFER USED TO ELIMINATE BACKGATING IN GAAS-MESFETS [J].
SMITH, FW ;
CALAWA, AR ;
CHEN, CL ;
MANFRA, MJ ;
MAHONEY, LJ .
IEEE ELECTRON DEVICE LETTERS, 1988, 9 (02) :77-80
[8]   ARSENIC PRECIPITATES AND THE SEMI-INSULATING PROPERTIES OF GAAS BUFFER LAYERS GROWN BY LOW-TEMPERATURE MOLECULAR-BEAM EPITAXY [J].
WARREN, AC ;
WOODALL, JM ;
FREEOUF, JL ;
GRISCHKOWSKY, D ;
MCINTURFF, DT ;
MELLOCH, MR ;
OTSUKA, N .
APPLIED PHYSICS LETTERS, 1990, 57 (13) :1331-1333
1