DEFECT-INDUCED AMORPHIZATION IN SILICON

被引：19

作者：

COLOMBO, L ^{[1
]}

MARIC, D ^{[1
]}

机构：

[1] CTR SVIZZERO CALCOLO SCI,CH-6928 MANNO,SWITZERLAND

来源：

EUROPHYSICS LETTERS | 1995年 / 29卷 / 08期

关键词：

D O I：

10.1209/0295-5075/29/8/006

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We present the first tight-binding molecular-dynamics simulation of the defect-induced crystal-to-amorphous transition in crystalline silicon. The process is studied by monitoring the response of the crystal lattice to a random insertion of self-interstitial defects. Both structural and electronic properties are investigated and a comparison to amorphous silicon as obtained by quenching from the melt is presented. Finally, we study the effects of the post-implantation thermal annealing on the implanted sample.

引用

页码：623 / 628

页数：6

共 16 条

[11] SIMULATION OF THE AMORPHOUS-SILICON PROPERTIES AND THEIR DEPENDENCE ON SAMPLE PREPARATION [J].