DEEP LEVEL TRANSIENT SPECTROSCOPY STUDY IN N-TYPE INP

被引:15
作者
LIM, H
SAGNES, G
BASTIDE, G
ROUZEYRE, M
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D O I
10.1063/1.330991
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O59 [应用物理学];
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页码:3317 / 3320
页数:4
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共 7 条
[1]   DEEP LEVEL SPECTROSCOPY IN INP-FE [J].
BREMOND, G ;
NOUAILHAT, A ;
GUILLOT, G ;
COCKAYNE, B .
ELECTRONICS LETTERS, 1981, 17 (01) :55-56
[2]  
CHOUDHURY ANM, 1979, IOP C P, V45, P211
[3]   STUDY OF THE DEEP ELECTRON TRAPS IN SEMICONDUCTING CDS [J].
GRILL, C ;
BASTIDE, G ;
SAGNES, G ;
ROUZEYRE, M .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (03) :1375-1380
[4]   DEEP LEVEL TRANSIENT SPECTROSCOPY OF ELECTRON TRAPS AND SENSITIZING CENTERS IN UNDOPED CDS SINGLE-CRYSTALS [J].
HUSSEIN, M ;
LLETI, G ;
SAGNES, G ;
BASTIDE, G ;
ROUZEYRE, M .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (01) :261-268
[5]  
Lang D.V., 1974, J APPL PHYS, V45, P3022
[6]   FAST CAPACITANCE TRANSIENT APPARATUS - APPLICATION TO ZNO AND O CENTERS IN GAP PARANORMAL JUNCTIONS [J].
LANG, DV .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3014-3022
[7]   DEEP TRAPS IN IDEAL N-INP SCHOTTKY DIODES [J].
WHITE, AM ;
GRANT, AJ ;
DAY, B .
ELECTRONICS LETTERS, 1978, 14 (13) :409-411