NUMERICAL-ANALYSIS OF GROUP-V ELEMENT TRANSPORT AND INCORPORATION AT A GROWING SURFACE IN MOCVD REACTOR

被引：12

作者：

SATO, M

SUZUKI, M

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1987年 / 26卷 / 03期

关键词：

D O I：

10.1143/JJAP.26.428

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：428 / 433

页数：6

共 16 条

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