THERMODYNAMIC ANALYSIS OF METALORGANIC VAPOR-PHASE EPITAXY OF III-V ALLOY SEMICONDUCTORS

被引：92

作者：

SEKI, H

KOUKITU, A

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1986年 / 74卷 / 01期

关键词：

D O I：

10.1016/0022-0248(86)90261-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：172 / 180

页数：9

相关论文

共 32 条

[1] MOCVD GROWTH AND CHARACTERIZATION OF (ALXGA1-X)YIN1-YP/GAAS
BAN, Y
OGURA, M
MORISAKI, M
HASE, N
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (08): : L606 - L609
[2] GROWTH OF GAAS(1-X)SBX BY ORGANOMETALLIC VAPOR-PHASE EPITAXY
BEDAIR, SM
TIMMONS, ML
CHIANG, PK
SIMPSON, L
HAUSER, JR
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1983, 12 (06) : 959 - 972
[3] THE ORGANO-METALLIC VPE GROWTH OF GASB AND GAAS1-XSBX USING TRIMETHYLANTIMONY
COOPER, CB
SAXENA, RR
LUDOWISE, MJ
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1982, 11 (06) : 1001 - 1010
[4] OM VPE GROWTH OF AIGASB AND ALGAASSB
COOPER, CB
SAXENA, RR
LUDOWISE, MJ
[J]. ELECTRONICS LETTERS, 1980, 16 (23) : 892 - 893
[5] COMPOSITION EFFECTS IN THE GROWTH OF GA(IN)ASYP1-Y ALLOYS BY MBE
FOXON, CT
JOYCE, BA
NORRIS, MT
[J]. JOURNAL OF CRYSTAL GROWTH, 1980, 49 (01) : 132 - 140
[6] INASSBP-INAS SUPER-LATTICE GROWN BY ORGANOMETALLIC VPE METHOD
FUKUI, T
HORIKOSHI, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (09) : L551 - L554
[7] ORGANOMETALLIC VPE GROWTH OF INAS1-XSBX ON INAS
FUKUI, T
HORIKOSHI, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (01) : L53 - L56
[8] MOCVD GROWTH OF (ALXGA1-X)YIN1-YP AND DOUBLE HETEROSTRUCTURES FOR VISIBLE-LIGHT LASERS
HINO, I
SUZUKI, T
[J]. JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) : 483 - 489
[9] VAPOR GROWTH OF GAAS1-XPX BY PYROLYSIS OF GA(CH3)3, ASH3 AND PH3
INOUE, M
ASAHI, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1972, 11 (06) : 919 - &
[10] THERMODYNAMIC STUDIES ON VAPOR GROWTH OF GAXIN1-XSB IN AN OPEN TUBE SYSTEM
KIYOSAWA, T
MASUMOTO, K
ISOMURA, S
[J]. JOURNAL OF CRYSTAL GROWTH, 1975, 30 (03) : 317 - 322

← 1 2 3 4 →