X-RAY REFLECTIVITY OF AN SB DELTA-DOPING LAYER IN SILICON

被引：23

作者：

SLIJKERMAN, WFJ

GAY, JM

ZAGWIJN, PM

VANDERVEEN, JF

MACDONALD, JE

WILLIAMS, AA

GRAVESTEIJN, DJ

VANDEWALLE, GFA

机构：

[1] UNIV COLL CARDIFF,COLL CARDIFF,CARDIFF CF1 3TH,WALES

[2] PHILIPS RES LABS,5600 JA EINDHOVEN,NETHERLANDS

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 68卷 / 10期

关键词：

D O I：

10.1063/1.347047

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

X-ray reflectivity measurements were made on Si(001) crystals containing a delta-doping layer of Sb atoms a few nanometers below the surface. The measurements show the Sb doping profile to be abrupt towards the substrate side of the sample and to decay towards the surface with a characteristic decay length of 1.01 nm.

引用

页码：5105 / 5108

页数：4

共 17 条

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